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H2N5366 - PNP EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

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H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – H2N5366

Datasheet Details

Part number	H2N5366
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	35.59 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5366 Datasheet
Note	This datasheet PDF includes multiple part numbers: H2N5366, H2N5366_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the H2N5366 datasheet.

Product details

Description

The H2N5366 is designed for general purpose applications requiring high breakdown voltages.

Features

This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -40 V VCEO Collector to E.

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Published: Mar 22, 2005 |