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H2N5366 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N5366, a member of the H2N5366_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The H2N5366 is designed for general purpose applications requiring high breakdown voltages.

Spec.

No.

Features

  • This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -40 V VCEO Collector to E.

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Datasheet preview – H2N5366

Datasheet Details

Part number H2N5366
Manufacturer Hi-Sincerity Mocroelectronics
File Size 35.59 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N5366 Datasheet
Additional preview pages of the H2N5366 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5366 is designed for general purpose applications requiring high breakdown voltages. Spec. No. : HE6275-A Issued Date : 1999.02.01 Revised Date : 2000.09.15 Page No. : 1/3 Features • This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ...............................................................................
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