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H2N5366, H2N5366_Hi PNP EPITAXIAL PLANAR TRANSISTOR

H2N5366 Description

HI-SINCERITY MICROELECTRONICS CORP.H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR .
The H2N5366 is designed for general purpose applications requiring high breakdown voltages.

H2N5366 Features

* This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: H2N5366, H2N5366_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N5366, H2N5366_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
35.59 KB
Datasheet
H2N5366_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N5366, H2N5366_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N5366-like datasheet