H2N5087, H2N5087_Hi PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6210 Issued Date : 1998.02.01 Revised Date : 2005.01.20 Pag.
This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current.

📥 Download Datasheet

H2N5087 Datasheet Preview — This datasheet PDF includes multiple part numbers: H2N5087, H2N5087_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H2N5087, H2N5087_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 49.47 KB
Datasheet: H2N5087_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: H2N5087, H2N5087_Hi.
Please refer to the document for exact specifications by model.

Applications

* for 1uA to 25mA collector current. Absolute Maximum Ratings TO-92
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW
* Maximum Voltages and Currents (TA=25°C

H2N5087 Distributors

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H2N5087_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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