H2N5087 Datasheet - Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

H2N5087 General Description

This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation T.

H2N5087 Datasheet (49.47 KB)

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H2N5087

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Hi-Sincerity Mocroelectronics

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49.47 KB

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Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6210 Issued Date : 1998.02.01 Revised Date : 2005.01.20 Pag.

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H2N5087 General Description

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