H2N5087 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N5087, a member of the H2N5087_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation T

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H2N5087
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	49.47 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5087 Datasheet
Additional preview pages of the H2N5087 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6210 Issued Date : 1998.02.01 Revised Date : 2005.01.20 Page No. : 1/5 Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ......................................................................

Published: Mar 22, 2005 |