H2N6426 Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

H2N6426 General Description

Darlington Transistor Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW * Maximum Voltages and Currents (TA=25°C) BVCEO Collec.

H2N6426 Datasheet (46.19 KB)

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H2N6426

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Hi-Sincerity Mocroelectronics

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Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6232 Issued Date : 1998.01.09 Revised Date : 2005.01.20 Pag.

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H2N6426 General Description

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