H2N6517 transistor equivalent, npn epitaxial planar transistor.
* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The H2N6517 is complementary to H2N6520
TO-92
Absolute Maximum Ratin.
requiring high breakdown voltages.
Features
* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter .
The H2N6517 is designed for general purpose applications requiring high breakdown voltages.
Features
* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The H2N6517 is complementary to H2N6520
TO-92
.
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