* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* M
H2N6517
Hi-Sincerity Mocroelectronics
51.71 KB
Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No. : 1/5 H2N6517 NPN EPITAXIAL PLANA.
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