H2N6517 Features
* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* M
H2N6517_Hi-SincerityMocroelectronics.pdf
Datasheet Details
H2N6517, H2N6517_Hi
Hi-Sincerity Mocroelectronics
51.71 KB
Npn epitaxial planar transistor.
This datasheet PDF includes multiple part numbers: H2N6517, H2N6517_Hi.
Please refer to the document for exact specifications by model.
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H2N6517 Distributor
