HI112 Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HI112 General Description

The HI112 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum * Maximum Power Dissipation Total Power Dissipat.

HI112 Datasheet (70.50 KB)

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Part number:

HI112

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

70.50 KB

Description:

Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No. : 1/4 HI112 NPN EPITAXIAL PLANAR .

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HI112 General Description

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