HI1109
HI1109 is PNP EPITAXIAL PLANAR TRANSISTOR manufactured by Hi-Sincerity Mocroelectronics.
- Part of the HI1109_Hi comparator family.
- Part of the HI1109_Hi comparator family.
Description
- Low frequency high voltage amplifier
- plementary pair with HI1609
Absolute Maximum Ratings (Ta=25°C)
- Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150 °C
- Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.25 W
- Maximum Voltages and Currents BVCBO Collector to Base Voltage -160 V BVCEO Collector to Emitter Voltage -160 V BVEBO Emitter to Base Voltage -5 V IC Collector Current -100 m A
..
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO
- VCE(sat) VBE
- h FE1
- h FE2 f T Cob Min. -160 -160 -5 60 30 Typ. 140 5.5 Max. -10 -2 -1.5 320 Unit V V V u A V V Test Conditions IC=-10u A, IE=0 IC=-1m A, IB=0 IE=-10u A, IC=0 VCB=-140V, IE=0 IC=-30m A, IB=-3m A VCE=-5V, IC=-10m A VCE=-5V, IC=-10m A VCE=-5V, IC=-1m A VCE=-5V, IC=-10m A VCB=-10V, f=-1MHz
- Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
MHz p F
Classification Of h FE1
Rank Range B 60-120 C 100-200 D 160-320
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Spec. No. : HE9019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 2/3
Saturation Voltage & Collector Current
1000 h FE
VCE=5V 100
Saturation Voltage (m V)
VCE(sat) @ IC=10IB
10 0.1 1 10 100
10 0.1 1 10 100
Collector Current (m A)
Collector Current (m A)
On Voltage & Collector...