• Part: HI1109
  • Description: PNP EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 59.04 KB
Download HI1109 Datasheet PDF
Hi-Sincerity Mocroelectronics
HI1109
HI1109 is PNP EPITAXIAL PLANAR TRANSISTOR manufactured by Hi-Sincerity Mocroelectronics.
- Part of the HI1109_Hi comparator family.
Description - Low frequency high voltage amplifier - plementary pair with HI1609 Absolute Maximum Ratings (Ta=25°C) - Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150 °C - Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.25 W - Maximum Voltages and Currents BVCBO Collector to Base Voltage -160 V BVCEO Collector to Emitter Voltage -160 V BVEBO Emitter to Base Voltage -5 V IC Collector Current -100 m A .. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO - VCE(sat) VBE - h FE1 - h FE2 f T Cob Min. -160 -160 -5 60 30 Typ. 140 5.5 Max. -10 -2 -1.5 320 Unit V V V u A V V Test Conditions IC=-10u A, IE=0 IC=-1m A, IB=0 IE=-10u A, IC=0 VCB=-140V, IE=0 IC=-30m A, IB=-3m A VCE=-5V, IC=-10m A VCE=-5V, IC=-10m A VCE=-5V, IC=-1m A VCE=-5V, IC=-10m A VCB=-10V, f=-1MHz - Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% MHz p F Classification Of h FE1 Rank Range B 60-120 C 100-200 D 160-320 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Spec. No. : HE9019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 2/3 Saturation Voltage & Collector Current 1000 h FE VCE=5V 100 Saturation Voltage (m V) VCE(sat) @ IC=10IB 10 0.1 1 10 100 10 0.1 1 10 100 Collector Current (m A) Collector Current (m A) On Voltage & Collector...