HI1109 - PNP EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HI1109
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	59.04 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HI1109 Datasheet
Note	This datasheet PDF includes multiple part numbers: HI1109, HI1109_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HI1109 datasheet.

Product details

Description

Low frequency high voltage amplifier Complementary pair with HI1609 Absolute Maximum Ratings (Ta=25°C) Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.25 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -160 V BVCEO Collector to Emitter Voltage -160 V BVEBO Emitter to Base Voltage -5 V IC Collector Current -100 mA www.DataSheet4U.

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Other Datasheets by Hi-Sincerity Mocroelectronics

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Published: May 21, 2007 |