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HI1109 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HI1109 datasheet PDF. This datasheet also covers the HI1109_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Low frequency high voltage amplifier Complementary pair with HI1609 Absolute Maximum Ratings (Ta=25°C) Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.25 W

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Note: The manufacturer provides a single datasheet file (HI1109_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI1109
Manufacturer Hi-Sincerity Mocroelectronics
File Size 59.04 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI1109 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HI1109 PNP EPITAXIAL PLANAR TRANSISTOR Description • Low frequency high voltage amplifier • Complementary pair with HI1609 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................. -55~+150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................. 1.25 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage .....................