HI13003 Datasheet | Hi-Sincerity Mocroelectronics

Description These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. TO-251 Absolute Maximum Ratings (Ta=25°C) - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W Total Power Dissipation (Ta=25°C) 1.3 W - Maximum Voltages and Currents (Ta=25°C) BVCEV Collector to Emitter Voltage 700 V .. VCEO Collector to Emitter Voltage 400 V VEBO Emitter to Base Voltage 9 V IC Collector Current 1.5 A Characteristics (Ta=25°C) Symbol BVCEO BVCEV IEBO ICEV - VCE(sat)1 - VCE(sat)2 - VCE(sat)3 - VBE(sat)1 - VBE(sat)2 - h FE1 - h FE2 Cob Min. 400 700 8 5 Typ. 21 Max. 1 1 0.5 1 3 1 1.2 40 25 Unit V V m A m A V V V V V Test Conditions IC=10m A IC=1m A, VBE(OFF)=1.5V VEB=9V VCE=700V, VBE(OFF)=1.5V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=0.5A, VCE=2V VCE=2V, IC=1A VCB=10V, IE=0, f=1MHz p F - Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HSMC Product Specification HI-SINCERITY MICROELECTRONICS...