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HI112 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HI112 datasheet PDF. This datasheet also covers the HI112_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HI112 is designed for use in general purpose amplifier and lowspeed switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipat

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HI112_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI112
Manufacturer Hi-Sincerity Mocroelectronics
File Size 70.50 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI112 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No. : 1/4 HI112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI112 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .....................................................................................