HI112 Datasheet | Hi-Sincerity Mocroelectronics

Description The HI112 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 25 W - Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 100 V VCEO Collector to Emitter Voltage 100 V VEBO Emitter to Base Voltage 5 V IC Collector Current 4 A .. Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICBO ICEO IEBO - VCE(sat)1 - VCE(sat)2 - VBE(on) - VBE(sat) - h FE1 - h FE2 - h FE3 Cob Min. 100 100 500 1 200 Typ. Max. 10 20 2 2 3 2.8 4 12 100 Unit V V u A u A m A V V V V K p F Test Conditions IC=1m A IC=30m A VCB=80V VCE=50V VEB=5V IC=2A, IB=8m A IC=4A, IB=40m A IC=2A, VCE=4V IC=4A, IB=80m A IC=0.5A, VCE=3V IC=2A, VCE=3V IC=4A, VCE=3V VCB=10V - Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 10000 125 C 1000 75 C o o Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No. : 2/4 Current Gain & Collector Current 10000 125 C 1000 75 C o o h FE h FE 100 25 C 10 h FE @ VCE=4V 1 1 10 100 1000 10000 o 100 25 C 10 o h FE @ VCE=3V 1 1 10 100 1000 10000 Collector Current IC (m...