Part number:
BB302M
Manufacturer:
Hitachi
File Size:
61.89 KB
Description:
Build in biasing circuit mos fet ic uhf rf amplifier.
* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
* Provide mini mold packages;
BB302M
Hitachi
61.89 KB
Build in biasing circuit mos fet ic uhf rf amplifier.
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