Datasheet4U Logo Datasheet4U.com

BB601M Datasheet - Hitachi

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB601M Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.

* High gain; PG = 21.5 dB typ. at f = 900 MHz

* Low noise; NF = 1.85 dB typ. at f = 900 MHz

* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

BB601M Datasheet (67.13 KB)

Preview of BB601M PDF

Datasheet Details

Part number:

BB601M

Manufacturer:

Hitachi

File Size:

67.13 KB

Description:

Build in biasing circuit mos fet ic uhf rf amplifier.

📁 Related Datasheet

BB609A Silicon Varlable Capacitance Diodes (Siemens)

BB609B Silicon Varlable Capacitance Diodes (Siemens)

BB619 Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) (Siemens Group)

BB619C Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV/ VTR tuners) (Siemens Group)

BB620 Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I) (Siemens Group)

BB621 Silicon Epitaxial Planar Capacitance Diode (Semtech Corporation)

BB622 Silicon Epitaxial Planar Capacitance Diode (Semtech Corporation)

BB629 Silicon Epitaxial Planar Capacitance Diodes (Semtech Corporation)

BB639 Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) (Siemens Group)

BB639 Silicon Variable Capacitance Diodes (Infineon Technologies AG)

TAGS

BB601M Build Biasing Circuit MOS FET UHF Amplifier Hitachi

Image Gallery

BB601M Datasheet Preview Page 2 BB601M Datasheet Preview Page 3

BB601M Distributor