HZU6.2L - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Hitachi Semiconductor (now Renesas)

Datasheet Details

Part number	HZU6.2L
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	28.31 KB
Description	Silicon Epitaxial Planar Zener Diode for Surge Absorb
Datasheet	HZU6.2L Datasheet

HZU6.2L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-776(Z) Rev 0 Feb.

Lower reverse current leakage compared with conventional products.
Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2L Laser Mark 62C Package Code URP Outline Cathode mark Mark 1 62C 2 1. Cathode 2. Anode HZU6.2L Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg.
1 Value 150 150 -55 to +150 Unit mW °C °C Electrical Charac.

Brand Logo	Part Number	Description	Manufacturer
	HZU6.2	Silicon Epitaxial Planar Zener Diodes	Renesas Technology

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