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HZU6.8Z - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Key Features

  • Low capacitance (C=25pF max) and can protect ESD of signal line.
  • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.8Z Laser Mark 68Z Package Code URP Outline Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg.
  • 1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Characte.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb
HZU6.2L Silicon Epitaxial Planar Zener Diode for Surge Absorb
HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb
HZU5.6Z Silicon Epitaxial Planar Zener Diode for Surge Absorb

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HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777(Z) Rev 0 Feb. 1999 Features • Low capacitance (C=25pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.8Z Laser Mark 68Z Package Code URP Outline Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd  Min 6.47    20 Typ      Max 7.