Hitachi HZU6.2Z
Silicon Epitaxial Planar Zener Diode for Surge Absorb
| Part No. | HZU6.2Z |
|---|---|
| Datasheet | HZU6.2Z Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| Buy | Stock & Price |
FEATURES
● Low capacitance (C=8.5pF max) and can protect ESD of signal line.● Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2Z Laser Mark 62Z Package Code URP Outline Cathode mark Mark 1 62Z 2 1. Cathode 2. Anode HZU6.2Z
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Two device total, See Fig.2.ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance Symbol VZ IR C rd Min 5.90 — — — Typ — — 8.0 — Max 6.50 3 8.5 60 Unit V µA pF Ω Test Condition I Z = 5 mA, 40ms pulse VR = 5.5V VR = 0V, f = 1 MHz I Z = 5 mA 2 HZU6.2Z Main Characteristic 10 -2 250 Polyimide board 20hx15wx0.8t Power Dissipation Pd (mW) (A) 10 -3 200 3.0 1.5 Iz 150 1.5 unit: mm Zener Current 10 -4 100 10 -5 50 10 -6 0 0 2 4 Zener Voltage 6 8 Vz (V) 10 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs.
