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HZU6.2Z - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Key Features

  • Low capacitance (C=8.5pF max) and can protect ESD of signal line.
  • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2Z Laser Mark 62Z Package Code URP Outline Cathode mark Mark 1 62Z 2 1. Cathode 2. Anode HZU6.2Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg.
  • 1 Value 200 150 -55 to +150 Unit mW °C °C 1. Two device total, See Fig.2.

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Part Number Description
HZU6.2L Silicon Epitaxial Planar Zener Diode for Surge Absorb
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HZU5.6Z Silicon Epitaxial Planar Zener Diode for Surge Absorb

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HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581(Z) Rev 0 Oct. 1997 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2Z Laser Mark 62Z Package Code URP Outline Cathode mark Mark 1 62Z 2 1. Cathode 2. Anode HZU6.2Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Two device total, See Fig.2. Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance Symbol VZ IR C rd Min 5.90 — — — Typ — — 8.0 — Max 6.50 3 8.