Hitachi HZU6.2L
Silicon Epitaxial Planar Zener Diode for Surge Absorb
| Part No. | HZU6.2L |
|---|---|
| Datasheet | HZU6.2L Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| Buy | Stock & Price |
FEATURES
● Lower reverse current leakage compared with conventional products.● Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2L Laser Mark 62C Package Code URP Outline Cathode mark Mark 1 62C 2 1. Cathode 2. Anode HZU6.2L
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg *1 Value 150 150 -55 to +150 Unit mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Zener voltage Reverse current Dynamic resistance Symbol VZ IR rd Min 5.80 Typ Max 6.60 100 30 Unit V nA Ω Test Condition I Z = 5 mA, 40ms pulse VR = 5.0V I Z = 5 mA 2 HZU6.2L Main Characteristic 10 10 (A) -2 250 Polyimide board 20hx15wx0.8t -3 200 10 Power Dissipation Pd (mW) -4 -5 3.0 1.5 Iz 10 150 1.5 unit: mm Zener Current 10 10 -6 -7 100 10 10 -8 50 -9 10 -10 0 1 2 3 4 5 6 7 8 0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Zener Voltage Vz (V) Fig.1 Zener current Vs.
