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HZU6.8L - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Key Features

  • Lower reverse current leakage compared with conventional products.
  • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.8L Laser Mark 68C Package Code URP Outline Cathode mark Mark 1 68C 2 1. Cathode 2. Anode HZU6.8L Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg.
  • 1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Charac.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb
HZU6.2L Silicon Epitaxial Planar Zener Diode for Surge Absorb
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HZU5.6Z Silicon Epitaxial Planar Zener Diode for Surge Absorb

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HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-678(Z) Rev 0 Jul. 1998 Features • Lower reverse current leakage compared with conventional products. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.8L Laser Mark 68C Package Code URP Outline Cathode mark Mark 1 68C 2 1. Cathode 2. Anode HZU6.8L Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Dynamic resistance Symbol VZ IR rd Min 6.47 — — Typ — — — Max 7.14 20 30 Unit V nA Ω Test Condition I Z = 5 mA, 40ms pulse VR = 5.0V I Z = 5 mA 2 HZU6.