Hitachi HZU6.8L
Silicon Epitaxial Planar Zener Diode for Surge Absorb
| Part No. | HZU6.8L |
|---|---|
| Datasheet | HZU6.8L Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| Buy | Stock & Price |
FEATURES
● Lower reverse current leakage compared with conventional products.● Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.8L Laser Mark 68C Package Code URP Outline Cathode mark Mark 1 68C 2 1. Cathode 2. Anode HZU6.8L
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Zener voltage Reverse current Dynamic resistance Symbol VZ IR rd Min 6.47 — — Typ — — — Max 7.14 20 30 Unit V nA Ω Test Condition I Z = 5 mA, 40ms pulse VR = 5.0V I Z = 5 mA 2 HZU6.8L Main Characteristic 10 -2 10 -3 250 Polyimide board 20hx15wx0.8t Power Dissipation Pd (mW) (A) 10 -4 10-5 10 10 10 10 10 -6 200 3.0 1.5 Iz 150 1.5 unit: mm Zener Current -7 -8 100 -9 50 -10 10-11 0 2 4 6 8 10 Zener Voltage Vz (V) 0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Fig.1 Zener current Vs.
