HZU6.8L - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Product Overview

Hitachi

Part number	HZU6.8L
Manufacturer	Hitachi
File Size	29.65 KB
Description	Silicon Epitaxial Planar Zener Diode for Surge Absorb
Datasheet	HZU6.8L Datasheet
Additional preview pages of the HZU6.8L datasheet.

Lower reverse current leakage compared with conventional products.
Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.8L Laser Mark 68C Package Code URP Outline Cathode mark Mark 1 68C 2 1. Cathode 2. Anode HZU6.8L Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg.
1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Charac.

📁 Similar Datasheet

HZU6.8 - Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU6.2 - Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU6L - Silicon Epitaxial Planar Zener Diode (Renesas Technology)
HZU - (HZU Series) Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU10 - (HZU Series) Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU11 - Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU11L - Silicon Epitaxial Planar Zener Diode (Renesas Technology)
HZU12 - Silicon Epitaxial Planar Zener Diodes (Renesas Technology)

Other Datasheets by Hitachi

Published: Apr 23, 2005 |