HZU6.8L Datasheet Silicon Epitaxial Planar Zener Diode For Surge Absorb

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-678(Z) Rev 0 Jul.

Datasheet Details

Part number	HZU6.8L
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	29.65 KB
Description	Silicon Epitaxial Planar Zener Diode for Surge Absorb
Datasheet	HZU6.8L_HitachiSemiconductor.pdf

Key Features

Lower reverse current leakage compared with conventional products.
Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.8L Laser Mark 68C Package Code URP Outline Cathode mark Mark 1 68C 2 1. Cathode 2. Anode HZU6.8L Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg.
1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Charac.

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Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	HZU6.8	Silicon Epitaxial Planar Zener Diodes	Renesas Technology

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