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Hitachi Power Semiconductor Device Electronic Components Datasheet

HZU6.2Z Datasheet

Silicon Epitaxial Planar Zener Diode for Surge Absorb

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HZU6.2Z
Silicon Epitaxial Planar Zener Diode for Surge Absorb
Features
Low capacitance (C=8.5pF max) and can protect ESD of signal line.
Ultra small Resin Package (URP) is suitable for surface mount design.
ADE-208-581(Z)
Rev 0
Oct. 1997
Ordering Information
Type No.
HZU6.2Z
Laser Mark
62Z
Package Code
URP
Outline
Cathode mark
Mark
1 62Z 2
1. Cathode
2. Anode


Hitachi Power Semiconductor Device Electronic Components Datasheet

HZU6.2Z Datasheet

Silicon Epitaxial Planar Zener Diode for Surge Absorb

No Preview Available !

HZU6.2Z
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Power dissipation
Pd *1
Junction temperature
Tj
Storage temperature
Tstg
Note 1. Two device total, See Fig.2.
Value
200
150
-55 to +150
Unit
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Zener voltage
Reverse current
Capacitance
VZ
IR
C
Dynamic resistance r d
5.90 —
——
— 8.0
——
6.50 V
3 µA
8.5 pF
60
IZ = 5 mA, 40ms pulse
VR = 5.5V
VR = 0V, f = 1 MHz
IZ = 5 mA
2


Part Number HZU6.2Z
Description Silicon Epitaxial Planar Zener Diode for Surge Absorb
Maker Hitachi
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HZU6.2Z Datasheet PDF






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