MBM200GR12 - IGBT POWER MODULE

Features

Low saturation voltage and high speed.
Low turn-OFF switching loss.
Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)).
High reliability structure.
Isolated heat sink (terminals to base).

Hitachi

Datasheet Details

Part number	MBM200GR12
Manufacturer	Hitachi
File Size	66.65 KB
Description	IGBT POWER MODULE
Datasheet	MBM200GR12 Datasheet
Additional preview pages of the MBM200GR12 datasheet.

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Full PDF Text Transcription

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Hitachi IGBT Module / Silicon N-Channel IGBT Spec. No. IGBT-SP-99024(R1) MBM200GR12 [Rated 200A/1200V, Dual-pack type] FEATURES · Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) · High reliability structure. · Isolated heat sink (terminals to base). OUTLINE DRAWING Unit in mm 2- φ 5.6 19 92 80 20 18.5 E2 G2 4-Fast-on Terminal #110 G2 E2 C2E1 E2 C1 C2E1 E2 C1 3-M5 23 23 40 φ 0.

Published: Nov 8, 2005 |