MBM200GR12 Datasheet | Hitachi Semiconductor

FEATURES - Low saturation voltage and high speed. - Low turn-OFF switching loss. - Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) - High reliability structure. - Isolated heat sink (terminals to base). OUTLINE DRAWING Unit in mm 2- φ 5.6 92 80 20 E2 G2 4-Fast-on Terminal #110 G2 E2 C2E1 E2 C1 C2E1 E2 C1 3-M5 40 φ 0.8 G1 E1 CIRCUIT DIAGRAM E1 G1 7 12 30 6 Weight : 230g ABSOLUTE MAXIMUM RATINGS(TC=25°C) Item Symbol Collector-Emitter Voltage VCES Gate-Emitter Voltage VGES DC IC Collector Current 1ms ICP DC IF Forward Current 1ms IFM Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Tstg Isolation Voltage Viso Terminals Screw Torque Mounting Notes; - 1: RMS current of Diode £ 60 Arms - 2, - 3 : Remended value 1.67 N- m (17 kgf- cm) Unit V V A A W °C °C VRMS N- m (kgf- cm) Value 1200 ±20 200 400 200 400 1130 -40 ~ +150 -40 ~ +125 2500(AC 1 minute) 1.96(20) 1.96(20) - 2 - 3 - 1 CHARACTERISTICS (TC=25°C) Item Symbol Unit Min. Typ. Max. Test Conditions Collector-Emitter Cut-Off Current ICES m A 1.0 VCE=1200V, VGE=0V Gate-Emitter Leakage Current IGES n A VGE=±20V, VCE=0V ±500 Collector-Emitter Saturation Voltage VCE(sat) V 2.2 2.8 IC=200A, VGE=15V Gate-Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC=200m A Input Capacitance Cies p F 19000 VCE=10V, VGE=0V, f=1MHz Rise Time tr 0.2 0.5 VCC=600V RL=3.0W Turn-ON Time ton 0.35 0.8 Switching Times ms - 4 RG=6.2W Fall Time tf 0.2 0.35 VGE=±15V Turn-Off Time toff 0.5 1.0 Peak Forward Voltage Drop VFM V 2.5 3.5 IF=200A, VGE=0V Reverse Recovery Time trr 0.35 IF=200A, VGE=-10V, di/dt=300A/ms ms IGBT Rth(j-c) 0.11 Thermal Impedance Junction to case °C/W FWD Rth(j-c) 0.20 Notes; - 4:RG value is the test condition’s value for decision of the switching times, not remended value, please determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. Remark; The specification given herein, is...