MBM400E33D-MFR - IGBT MODULE

Hitachi

Datasheet Details

 Ultra High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  High reliability, high durability module.  High thermal fatigue durability. (delta Tc=70K, N30,000cycles)  Suitable for kHz order switching.

📁 MBM400E33D-MFR Similar Datasheet

MBM200A6 - IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES (Hitachi Semiconductor)
MBM2147H - MOS 4096-Bit Static RAM (Fujitsu)
MBM2149 - MOS 4096-Bit Static RAM (Fujitsu)
MBM2212-20 - (MBM2212-xx) MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY (Fujitsu Media Devices)
MBM2212-25 - (MBM2212-xx) MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY (Fujitsu Media Devices)
MBM27128-20 - UV Erasable ROM (Fujitsu)
MBM27128-25 - UV Erasable ROM (Fujitsu)
MBM27128-30 - UV Erasable ROM (Fujitsu)

Other Datasheets by Hitachi

Published: Mar 3, 2017 |