MBM400E33D-MFR Datasheet | Hitachi Semiconductor

FEATURES  Ultra High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  High reliability, high durability module.  High thermal fatigue durability. (delta Tc=70K, N30,000cycles)  Suitable for k Hz order switching ABSOLUTE MAXIMUM RATINGS (Tc=25o C ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals (M4/M8) Mounting (M6) VCES VGES IC ICp IF IFM Tj Tstg VISO - Notes: (1) Remended Value 1.80.2/91N- m Unit MBM400E33D-MFR A o C o C VRMS N- m 3,300 20 400 800 400 800 -40 ~ +125 -40 ~ +125 6,000(AC 1 minute) 2/10 (1) 6 (2) (2) Remended Value 5.50.5N- m ELECTRICAL CHARACTERISTICS Item Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector...