MBN1200GS12AW - Silicon N-Channel IGBT

Hitachi Semiconductor (now Renesas)

Datasheet Details

Part number	MBN1200GS12AW
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	137.91 KB
Description	Silicon N-Channel IGBT
Datasheet	MBN1200GS12AW Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MBNP01Q40Q8	Complex Transistors	CYStech Electronics
MBNP2026G6	N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device	CYStech Electronics
MBNP2074G6	N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device	CYStech Electronics

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number	Description
MBN1200D25B	Silicon N-Channel IGBT
MBN1200D33A	Silicon N-Channel IGBT
MBN400A6	IGBT Module Range
MBN400C20	IGBT Module / Silicon N Channel IGBT
MBN400C33A	IGBT Module / Silicon N Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

IGBT MODU ODULE MBN1200GS12AW Silicon N-channel IGBT OUTLINE DRAWING 130 110 4- φ 6.5 Unit in mm 2-M4 19.5 27.5 FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). E 110 C G 46.75 E 13 +1 37 -0.5 30 36 19 2-M8 E E Weight: 1,300 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes:(1)RMS Current of Diode 360Arms max. (2)Recommended Value 1.18/7.35N.m(12/75kgf.