MBN1200D33A Datasheet | Hitachi Semiconductor

FEATURES - High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) - low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). - High speed,low loss IGBT module. - Low driving power due to low input capacitance MOS gate. - High reliability,high durability module. - Isolated head sink (terminal to base). 6-M8 3-M4 8-φ7 Weight: 1,200 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals(M4/M8) Screw Torque Mounting(M6) Notes: (1)Remended Value 1.8±0.2/9±1N.m CHARACTERISTICS Item (Tc=25°C ) Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time VCE=3,300V,VGE=0V VGE=±20V,VCE=0V IC=1,200A,VGE=15V VCE=10V, IC =1,200m A VCE=10V,VGE=0V,f=100KHz VCC=1,650V,Ic=1,200A ms L=100n H RG=3.3W (3) VGE=±15V Tc=125°C -Ic=1,200A,VGE=0V V ms Vcc=1,650V,-Ic=1,200A,L=100n H, Tc=125°C (4) °C/W Thermal Impedance IGBT Rth(j-c) 0.008 Junction to case FWD Rth(j-c) 0.016 Notes:(3) RG value is the test condition’s value for decision of the switching times, not remended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. (4) Counter arm IGBT VGE=-15V w w w t a .D Symbol I CES IGES VCE(sat) VGE(TO) Cies tr ton tf toff VFM trr S a Unit m A n A V V n F W °C °C VRMS N.m e h U 4 t e TERMINALS .c C E m o 3,300 ±20 1,200 2,400 1,200 2,400 12,000 -40 ~ +125 -40 ~ +125 5,400(AC 1 minute) 2/10 6 (1) (2) (2)Remended Value 5.5±0.5N.m Min....