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MBN1200D33A - Silicon N-Channel IGBT

Features

  • High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles).
  • low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
  • High speed,low loss IGBT module.
  • Low driving power due to low input capacitance MOS gate.
  • High reliability,high durability module.
  • Isolated head sink (terminal to base). C C 6-M8 3-M4 8-φ7 G Weight: 1,200 (g).

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Full PDF Text Transcription

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IGBT MODULE MBN1200D33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input capacitance MOS gate. *High reliability,high durability module. * Isolated head sink (terminal to base).
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