MBN1200GS12AW Datasheet | Hitachi Semiconductor

IGBT MODU ODULE Silicon N-channel IGBT OUTLINE DRAWING 130 110 4- φ 6.5 Unit in mm 2-M4 19.5 27.5 FEAT EATURES RES - High speed and low saturation voltage. - low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). - Isolated head sink (terminal to base). +1 37 -0.5 2-M8 Weight: 1,300 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes:(1)RMS Current of Diode 360Arms max. (2)Remended Value 1.18/7.35N.m(12/75kgf.cm) CHARACTERISTICS Item Collector Emitter Cut-Off Current I CES m A 2.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES n A ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.9 3.6 IC=1,200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =1,200m A Input Capacitance Cies n F 112 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.6 1.6 VCC=600V ms Turn On Time ton 0.8 2.2 RL=0.5W Switching Times Fall Time tf 0.45 0.55 RG=3.3W (4) 1.4 1.6 VGE=±15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.7 IF=1,200A,VGE=0V Reverse Recovery Time trr 0.5 IF=1,200A,VGE=-10V, di/dt=1200A/ms ms Junction to case Rth(j-c) °C/W 0.022 Thermal Impedance IGBT 0.05 FWD Rth(j-c) Notes:(4) RG value is the test condition’s value for decision of the switching times, not remended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. w w (Tc=25°C ) w t a .D Symbol S a Unit W °C °C VRMS N.m (kgf.cm) e h U 4 t e TERMINALS .c...