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MBN1200GS12AW - Silicon N-Channel IGBT

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IGBT MODU ODULE MBN1200GS12AW Silicon N-channel IGBT OUTLINE DRAWING 130 110 4- φ 6.5 Unit in mm 2-M4 19.5 27.5 FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). E 110 C G 46.75 E 13 +1 37 -0.5 30 36 19 2-M8 E E Weight: 1,300 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes:(1)RMS Current of Diode 360Arms max. (2)Recommended Value 1.18/7.35N.m(12/75kgf.
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