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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SA1189 Datasheet

Silicon PNP Epitaxial

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2SA1188, 2SA1189
Silicon PNP Epitaxial
Application
Low frequency amplifier
Complementary pair with 2SC2853 and 2SC2854
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SA1189 Datasheet

Silicon PNP Epitaxial

No Preview Available !

2SA1188, 2SA1189
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
2SA1188
–90
–90
–5
–100
100
400
150
–55 to +150
2SA1189
–120
–120
–5
–100
100
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
2SA1188
2SA1189
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–90 —
–120 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–90 —
–120 —
—V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–5
–5
—V
IE = –10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
I CBO
I EBO
hFE*1
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
VCE(sat)
VBE(sat)
——
——
250 —
–0.1 —
–0.1 —
800 250
–0.1 µA
–0.1 µA
800
— –0.05 –0.15 — –0.05 –0.15 V
— –0.7 –1.0 — –0.7 –1.0 V
VCB = –70 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V,
IC = –2 mA*2
IC = –10 mA,
IB = –1 mA*2
Gain bandwidth product fT
Collector output
capacitance
Cob
— 130 — — 130 — MHz VCE = –6 V,
IC = –10 mA
— 3.2 — — 3.2 — pF VCB = –10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SA1188 and 2SA1189 are grouped by hFE as follows.
2. Pulse test
DE
250 to 500 400 to 800
See characteristic curves of 2SA1190 and 2SA1191.
2


Part Number 2SA1189
Description Silicon PNP Epitaxial
Maker Hitachi Semiconductor
Total Page 5 Pages
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