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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SB1002 Datasheet

Silicon PNP Epitaxial Transistor

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2SB1002
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SD1368
Outline
UPAK
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SB1002 Datasheet

Silicon PNP Epitaxial Transistor

No Preview Available !

2SB1002
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
VCBO
VCEO
VEBO
IC
i *1
C(peak)
PC * 2
Tj
–70
–50
–6
–1
–1.5
1
150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 ms, Duty cycle 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Gain bandwidth product
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
I CBO
I EBO
hFE*1
VCE(sat)
VBE(sat)
fT
Min
–70
–50
–6
100
Typ
150
Collector output capacitance Cob — 35
Note: 1. The 2SB1002 is grouped by hFE as follows.
Mark
CH
CJ
hFE 100 to 200 160 to 320
Max
–0.1
–0.1
320
–0.6
–1.2
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE =
IE = –10 µA, IC = 0
VCB = –50 V, IE = 0
VEB = –4 V, IC = 0
VCE = –2 V, IC = –0.1 A
IC = –1 A,
IB = –0.1 A (Pulse test)
IC = –1 A,
IB = –0.1 A (Pulse test)
VCE = –2 V,
IC = –10 mA (Pulse test)
VCB = –10 V, IE = 0,
f = 1 MHz
2


Part Number 2SB1002
Description Silicon PNP Epitaxial Transistor
Maker Hitachi Semiconductor
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2SB1002 Datasheet PDF






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