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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SC4796 Datasheet

Silicon NPN Transistor

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2SC4796
Silicon NPN Triple Diffused
Application
TV / character display horizontal deflection output
TO–3PFM
Features
• High speed switching
tf 0.6 µs
• High breakdown voltage
VCBO = 1700 V
• Isolated package
TO–3PFM
Absolute Maximum Ratings (Ta = 25°C)
1
2
3
1. Base
2. Collector
3. Emitter
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
1700
V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
900
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
6
V
———————————————————————————————————————————
Collector current
IC 6 A
———————————————————————————————————————————
www.DataSheet4UC.oclolemctor surge current
ic(surge)
16
A
———————————————————————————————————————————
Collector power dissipation
PC*1
50
W
———————————————————————————————————————————
Junction temperature Tj 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at TC = 25°C.


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SC4796 Datasheet

Silicon NPN Transistor

No Preview Available !

2SC4796
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test Conditions
———————————————————————————————————————————
Collector to emitter breakdown V(BR)CEO 900 —
V
IC = 10 mA, RBE =
voltage
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO 6
——
V IE = 10 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
— — 500 µA VCE = 1700 V, RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
— — 35
VCE = 5 V, IC = 1A
———————————————————————————————————————————
Collector to emitter saturation VCE(sat) — — 5
voltage
V IC = 5 A, IB = 1 A
———————————————————————————————————————————
Base to emitter saturation
VBE(sat)
1.5
V
IC = 5 A, IB = 1 A
voltage
———————————————————————————————————————————
Fall time
tf — — 0.6 µs ICP = 5 A, IB1 = 1 A
IB2 = –2 A, fH = 31.5 kHz
———————————————————————————————————————————
Maximum Collector Power Dissipation Curve
80
www.DataSheet4U.com
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
Maximum Safe Operation Area
20
f = 15.75 kHz
(100 V, 16 A)
Ta = 25 °C
16
For picture tube arcing
12
8
4 (900 V, 3 A)
0.5 mA
0 400 800 1200 1600 2000
Collector to Emitter Voltage V CE (V)


Part Number 2SC4796
Description Silicon NPN Transistor
Maker Hitachi Semiconductor
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2SC4796 Datasheet PDF






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