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2SC5023 - Silicon NPN Epitaxial Type Transistor

Features

  • Excellent high frequency characteristics fT = 1000 MHz typ.
  • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ.
  • Suitable for wide band video amplifier 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage t.

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Datasheet Details

Part number 2SC5023
Manufacturer Hitachi Semiconductor
File Size 45.77 KB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet 2SC5023 Datasheet
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www.DataSheet4U.com 2SC5023 Silicon NPN Epitaxial Application High frequency amplifier TO–126FM Features • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ • Suitable for wide band video amplifier 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ic(peak) PC PC*1 Tj Tstg Rating 100 100 5 0.2 0.5 1.
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