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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2492 Datasheet

Silicon NPN Transistor

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2SD2491, 2SD2492
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Features
Isolated package
TO-126FM
Outline
TO-126FM
123
1. Emitter
2. Collector
3. Base


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD2492 Datasheet

Silicon NPN Transistor

No Preview Available !

2SD2491, 2SD2492
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
PC
PC * 1
Tj
Tstg
Ratings
2SD2491
160
160
5
100
1.35
8
150
–55 to +150
2SD2492
200
200
5
100
1.35
8
150
–55 to +150
Unit
V
V
V
mA
W
W
°C
°C
Electrical Characteristics (Ta = 25°C)
2SD2491
2SD2492
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
160 —
200 —
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
160 —
200 —
V
IC = 1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
—— V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
DC current transfer ratio hFE1*1
DC current transfer ratio hFE2
Base to emitter voltage VBE
Collector to emitter
saturation voltage
VCE(sat)
——
——
60 —
30 —
——
——
10 —
——
320 60
— 30
1.5 —
2—
µA
10 µA
320
1.5 V
2V
VCB = 140 V, IE = 0
VCB = 160 V, IE = 0
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
IC = 30 mA, IB = 3 mA
Gain bandwidth product fT
Collector output
capacitance
Cob
— 140 — — 140 — MHz VCE = 5 V, IC = 10 mA
— 3.8 — — 3.8 — pF VCB = 10 V, IE = 0
f = 1 MHz
Note: 1. The 2SD2491 and 2SD2492 are grouped by hFE1 and its specification is as follows.
B
60 to 120
CD
100 to 200 160 to 320
2


Part Number 2SD2492
Description Silicon NPN Transistor
Maker Hitachi Semiconductor
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2SD2492 Datasheet PDF





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