2SJ506S mosfet equivalent, silicon p-channel mosfet.
* Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS =
–10V, ID =
–5A)
* Low drive current
* High speed switching
* 4V gat.
lding. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kon.
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