* Low on-resistance R DS(on) = 0.35 Ω typ. at (V GS =
  –10V, ID =
  –1A)
* Low drive current
* 4 V gete drive devices
* High .

t ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. .

Silicon P-Channel MOSFET

2SJ511

2SJ512

2SJ516

2SJ517

2SJ50

2SJ501

2SJ502

2SJ503

2SJ504

2SJ505

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