* Low on-resistance R DS(on) = 0.16 Ω typ.
* 4 V gete drive devices
* High speed switching Outline TO
  –220FM D G 1 2 S 1. Gate 2. Drain 3..

Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kow.

Silicon P-Channel MOSFET

2SJ540

2SJ541

2SJ542

2SJ543

2SJ544

2SJ545

2SJ546

2SJ548

2SJ549

2SJ549L

2SJ549S

2SJ50

2SJ501

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