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2SK1297 - Silicon N-Channel MOS FET

Hitachi Semiconductor

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Datasheet Details

Part number: 2SK1297
Manufacturer: Hitachi Semiconductor
File Size: 78.10 KB
Datasheet: 2SK1297_HitachiSemiconductor.pdf
Description: Silicon N-Channel MOS FET

2SK1297 Product details

Features

x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1297 Absolute Maximum Ratings (Ta = 25GC) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www. DataSheet4U. com Channel dissipation Symbol VDSS VGSS.

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Silicon N-Channel MOS FET Hitachi Semiconductor

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