Datasheet4U Logo Datasheet4U.com

2SK2202 - Silicon N-Channel MOS FET

Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2202 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage tempera.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2200 Silicon N Channel MOS Type Field Effect Transistor Toshiba Semiconductor
2SK2201 Silicon N-Channel MOS Type Field Effect Transistor Toshiba Semiconductor
2SK2207 MOSFET Sanken electric
2SK2208 MOSFET Sanken electric
2SK2209-01R Power MOSFET Fuji Electric

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2203 Silicon N-Channel MOS FET
2SK2212 Silicon N-Channel MOS FET
2SK2216 Silicon N-Channel MOS FET
2SK2220 Silicon N-Channel MOSFET
2SK2221 Silicon N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
2SK2202 Silicon N-Channel MOS FET ADE-208-089 A 2nd. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2202 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Published: |