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2SK2684L - Silicon N Channel DV-L MOS FET

Key Features

  • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A).
  • 4V gate drive devices.
  • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2684(L), 2SK2684(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2684 Silicon N Channel DV-L MOS FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2684(L), 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2684(L), 2SK2684(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.