2SK2684L
Overview
- Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A)
- 4V gate drive devices.
- High speed switching Outline LDPAK 4 4
- 1 1 2 3 G 2 3
- Drain
- Source
- Drain S
| Part | 2SK2684L |
|---|---|
| Description | Silicon N Channel DV-L MOS FET |
| Manufacturer | Hitachi Semiconductor |
| Size | 51.02 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SK2687-01 | Fuji Electric | N-Channel Silicon Power MOSFET |
| 2SK2682LS | SANYO | N-Channel Silicon MOSFET |
| 2SK2688-01 | Fuji Electric | N-channel MOS-FET |
| 2SK2689-01MR | Fuji Electric | N-channel MOS-FET |
| 2SK2687-01 | VBsemi | N-Channel 30V MOSFET |