2SK3177 Features
* Low on-resistance R DS = 90 mΩ typ.
* High speed switching
* 4 V gate drive device can be driven from 5 V source Outline TO
* 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3177 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source vo
2SK3177_HitachiSemiconductor.pdf
Datasheet Details
2SK3177
Hitachi Semiconductor
51.81 KB
N-channel mosfet.
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Taiwan Semiconductor
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