2SK3176 Datasheet - Toshiba Semiconductor

2SK3176 N-Channel MOSFET

2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V) 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating .

2SK3176 Features

* laws and regulations. 6 2007-03-16

2SK3176_ToshibaSemiconductor.pdf