2SK3107C Datasheet, Mosfet, Renesas

2SK3107C Features

• Mosfet
• Directly driven by a 4.5 V power source.
• Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2  MAX. (VGS = 4.5 V, ID = 50 mA) Ord

PDF File Details

Part number:

2SK3107C

Manufacturer:

Renesas ↗

File Size:

94.39kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V

2SK3107C Application

• Applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipmen

TAGS

2SK3107C

Renesas

📁 Related Datasheet

2SK3107 - N-Channel MOSFET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3107 is a switchin.

2SK310 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK310 DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Volt.

2SK310 - (2SK310 / 2SK311) SILICON N-CHANNEL MOS FET (Hitachi Semiconductor)
.. .

2SK3101LS - N-Channel Silicon MOSFET (Sanyo)
Ordering number : ENN7910 2SK3101LS 2SK3101LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance..

2SK3102-01R - MOSFET / Power MOSFETs (Fuji Semiconductors)
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c .

2SK3105 - N-Channel MOSFET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3105 is a switching device wh.

2SK3108 - N-Channel MOSFET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3108 is N channel MOS FET device.

2SK3109 - N-Channel MOSFET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N channel MOS FET device.

2SK3109-AZ - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3109-AZ FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On.

2SK311 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK311 DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Volt.