Datasheet4U Logo Datasheet4U.com

4AJ11 Datasheet - Hitachi Semiconductor

Silicon P-Channel Power MOS FET Array

4AJ11 Features

* Low on-resistance R DS(on) 0.13 , VGS =

* 10 V, I D =

* 4 A R DS(on) 0.17 , VGS =

* 4 V, I D =

* 4 A

* Capable of 4 V gate drive

* Low drive current

* High speed switching

* High density mounting

* Suitable for motor drive

4AJ11 Datasheet (35.59 KB)

Preview of 4AJ11 PDF

Datasheet Details

Part number:

4AJ11

Manufacturer:

Hitachi Semiconductor

File Size:

35.59 KB

Description:

Silicon p-channel power mos fet array.

📁 Related Datasheet

4A1 Plastic Silicon Rectifiers (Luguang Electronic)

4A10 Plastic Silicon Rectifiers (Luguang Electronic)

4A12P-1AH-12R5 Surge Line Protection Module (Bourns Electronic)

4A12P-506-500 Surge Line Protection Module (Bourns Electronic)

4A12P-516-500 Surge Line Protection Module (Bourns Electronic)

4AC12 Silicon NPN Epitaxial (Hitachi Semiconductor)

4AC14 Silicon NPN Triple Diffused (Hitachi Semiconductor)

4AC17 Power Transistor Arrays (Rohm)

4AF05 (4AF Series) Pressfit Rectifier Diodes (International Rectifier)

4AF1 (4AF Series) Pressfit Rectifier Diodes (International Rectifier)

TAGS

4AJ11 Silicon P-Channel Power MOS FET Array Hitachi Semiconductor

Image Gallery

4AJ11 Datasheet Preview Page 2 4AJ11 Datasheet Preview Page 3

4AJ11 Distributor