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HD74LV10A - Triple 3-input Positive NAND Gates

Description

The HD74LV10A performs the Boolean functions Y = A B

C or Y = A+ B + C in positive logic.

Low-voltage and high-speed operation is suitable for the battery-powered products (e.g., notebook computers), and the low-power consumption extends the battery life.

Features

  • VCC = 2.0 V to 5.5 V operation All inputs VIH (Max. ) = 5.5 V (@VCC = 0 V to 5.5 V) All outputs VO (Max. ) = 5.5 V (@VCC = 0 V) Typical VOL ground bounce < 0.8 V (@VCC = 3.3 V, Ta = 25°C) Typical VOH undershoot > 2.3 V (@VCC = 3.3 V, Ta = 25°C) Output current ±6 mA (@VCC = 3.0 V to 3.6 V), ±12 mA (@VCC = 4.5 V to 5.5 V) Function Table Inputs A H L X X Note: H: High level L: Low level X: Immaterial B H X L X C H X X L Output Y L H H H HD.

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Datasheet Details

Part number HD74LV10A
Manufacturer Hitachi Semiconductor
File Size 54.74 KB
Description Triple 3-input Positive NAND Gates
Datasheet download datasheet HD74LV10A Datasheet
Additional preview pages of the HD74LV10A datasheet.

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Full PDF Text Transcription

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HD74LV10A Triple 3-input Positive NAND Gates ADE-205-251 (Z) 1st Edition March 1999 Description The HD74LV10A performs the Boolean functions Y = A•B •C or Y = A+ B + C in positive logic. Low-voltage and high-speed operation is suitable for the battery-powered products (e.g., notebook computers), and the low-power consumption extends the battery life. Features • • • • • • VCC = 2.0 V to 5.5 V operation All inputs VIH (Max.) = 5.5 V (@VCC = 0 V to 5.5 V) All outputs VO (Max.) = 5.5 V (@VCC = 0 V) Typical VOL ground bounce < 0.8 V (@VCC = 3.3 V, Ta = 25°C) Typical VOH undershoot > 2.3 V (@VCC = 3.3 V, Ta = 25°C) Output current ±6 mA (@VCC = 3.0 V to 3.6 V), ±12 mA (@VCC = 4.5 V to 5.
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