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HM5116100 - 16M FP DRAM

General Description

The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word × 1-bit.

It employs the most advanced 0.5µm CMOS technology for high performance and low power.

The HM5116100 offers Fast Page Mode as a high speed access mode.

Key Features

  • Single 5 V ( ±10%).
  • Access time: 60 ns/70 ns (max).
  • Power dissipation  Active mode: 440 mW/385 mW (max)  Standby mode 11 mW (max).
  • Fast page mode capability.
  • Refresh cycles  4096 refresh cycles : 64 ms.
  • 3 variations of refresh  RAS -only refresh  CAS -before-RAS refresh  Hidden refresh.
  • Test function  16-bit parallel test mode Ordering Information Type No. HM5116100S-6 HM5116100S-7 Access time 60 ns 70 ns Package 300-mil 26-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM5116100 Series 16 M FP DRAM (16-Mword × 1-bit) 4 k Refresh ADE-203-646E (Z) Rev. 5.0 Nov. 1997 Description The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word × 1-bit. It employs the most advanced 0.5µm CMOS technology for high performance and low power. The HM5116100 offers Fast Page Mode as a high speed access mode. It is packaged in 26-pin plastic SOJ. Features • Single 5 V ( ±10%) • Access time: 60 ns/70 ns (max) • Power dissipation  Active mode: 440 mW/385 mW (max)  Standby mode 11 mW (max) • Fast page mode capability • Refresh cycles  4096 refresh cycles : 64 ms • 3 variations of refresh  RAS -only refresh  CAS -before-RAS refresh  Hidden refresh • Test function  16-bit parallel test mode Ordering Information Type No.