HN29WT800, HN29WB800 - (HN29WB800 / HN29WT800) CMOS Flash Memory

Hitachi Semiconductor

The HN29WT800 by Hitachi Semiconductor is a (HN29WB800 / HN29WT800) CMOS Flash Memory. Below is the official datasheet preview.

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HN29WT800 (HN29WB800 / HN29WT800) CMOS Flash Memory by Hitachi Semiconductor - Datasheet Preview — Official preview page of the **HN29WT800** (HN29WB800 / HN29WT800) CMOS Flash Memory datasheet (Hitachi Semiconductor).

Datasheet Details

Part number	HN29WT800, HN29WB800
Manufacturer	Hitachi Semiconductor
File Size	204.47 KB
Description	(HN29WB800 / HN29WT800) CMOS Flash Memory
Datasheet	HN29WB800_HitachiSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HN29WT800, HN29WB800. Please refer to the document for exact specifications by model.
Additional preview pages of the HN29WT800 datasheet.

HN29WT800 Product details

Description

The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase capabilities with a single 3.3 V power supply.

Features

On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V.
Access time: 80/100/120 ns (max).
Low power dissipation:  ICC = 30 mA (max) (Read)  ICC = 200 µA (max) (Standby)  ICC = 40 mA (max) (Program)  ICC = 40 mA (max) (Erase)  ICC = 1 µA (typ) (Deep powerdown).
Automatic page programming:  Programming time: 25 ms (typ)  Program unit: 128 word.
Automatic erase:  Erase time: 50 ms (typ)  Erase unit: Boot block; 8-kword/16-kbyte × 1 Parameter b.

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Published: Feb 1, 2007 |