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HN29WB800 - (HN29WB800 / HN29WT800) CMOS Flash Memory

General Description

The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase capabilities with a single 3.3 V power supply.

Key Features

  • On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V.
  • Access time: 80/100/120 ns (max).
  • Low power dissipation:  ICC = 30 mA (max) (Read)  ICC = 200 µA (max) (Standby)  ICC = 40 mA (max) (Program)  ICC = 40 mA (max) (Erase)  ICC = 1 µA (typ) (Deep powerdown).
  • Automatic page programming:  Programming time: 25 ms (typ)  Program unit: 128 word.
  • Automatic erase:  Erase time: 50 ms (typ)  Erase unit: Boot block; 8-kword/16-kbyte × 1 Parameter b.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HN29WT800 Series HN29WB800 Series 1048576-word × 8-bit / 524288-word × 16-bit CMOS Flash Memory ADE-203-537A(Z) Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low power and high performance systems such as mobile, personal computing and communication products. Features • On-board single power supply (VCC): VCC = 3.3 V ± 0.