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HN29WT800 - (HN29WB800 / HN29WT800) CMOS Flash Memory

Download the HN29WT800 datasheet PDF. This datasheet also covers the HN29WB800 variant, as both devices belong to the same (hn29wb800 / hn29wt800) cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase capabilities with a single 3.3 V power supply.

Key Features

  • On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V.
  • Access time: 80/100/120 ns (max).
  • Low power dissipation:  ICC = 30 mA (max) (Read)  ICC = 200 µA (max) (Standby)  ICC = 40 mA (max) (Program)  ICC = 40 mA (max) (Erase)  ICC = 1 µA (typ) (Deep powerdown).
  • Automatic page programming:  Programming time: 25 ms (typ)  Program unit: 128 word.
  • Automatic erase:  Erase time: 50 ms (typ)  Erase unit: Boot block; 8-kword/16-kbyte × 1 Parameter b.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HN29WB800_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HN29W12811 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)
HN29W25611 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
HN29WB800 (HN29WB800 / HN29WT800) CMOS Flash Memory
HN29V51211 512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)
HN27C256A 256K UV and OTP EPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HN29WT800 Series HN29WB800 Series 1048576-word × 8-bit / 524288-word × 16-bit CMOS Flash Memory ADE-203-537A(Z) Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low power and high performance systems such as mobile, personal computing and communication products. Features • On-board single power supply (VCC): VCC = 3.3 V ± 0.