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Hitachi Power Semiconductor Device Electronic Components Datasheet

K1162 Datasheet

Silicon N-Channel MOS FET

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2SK1161, 2SK1162
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source


Hitachi Power Semiconductor Device Electronic Components Datasheet

K1162 Datasheet

Silicon N-Channel MOS FET

No Preview Available !

2SK1161, 2SK1162
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1161
2SK1162
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
10
30
10
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2


Part Number K1162
Description Silicon N-Channel MOS FET
Maker Hitachi Semiconductor
PDF Download

K1162 Datasheet PDF






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