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K1162 - Silicon N-Channel MOS FET

Hitachi Semiconductor (now Renesas)

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K1162 silicon n-channel mos fet by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	K1162
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	33.54 KB
Description	Silicon N-Channel MOS FET
Datasheet	K1162 Datasheet

Overview

2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power.

Key Features

Low on-resistance.
High speed switching.
Low drive current.
No secondary breakdown.
Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storag.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
K1164	2SK1164
K1153	2SK1153
K1154	2SK1154
K1158	2SK1158
K1170	2SK1170