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K1329 - 2SK1329

Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1328, 2SK1329 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperat.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1328 2SK1328
K1306 2SK1306
K1307 2SK1307
K1315 2SK1316
K1316 2SK1316

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1328, 2SK1329 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1328, 2SK1329 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDSS Ratings 450 500 ±30 12 Unit V VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 V A A A W °C °C 48 12 60 150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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