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K1338 - 2SK1338

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switching regulator and DC-DC converter Outline TO-220AB ADE-208-1275 (Z) 1st. Edition Mar. 2001 D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1338 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel te.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K133 2SK133
K1336 Silicon N-Channel MOS FET
K1306 2SK1306
K1307 2SK1307
K1315 2SK1316

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-220AB ADE-208-1275 (Z) 1st. Edition Mar. 2001 D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1338 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2.