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K2247 Datasheet 2SK2247

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview

2SK2247 Silicon N-Channel MOS FET Application High speed power.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source.
  • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK G 21 3 4 D 1. Gate 2. Drain 3. Source 4. Drain S 2SK2247 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel d.