Datasheet4U Logo Datasheet4U.com

K2938 - 2SK2938

Features

  • Low on-resistance RDS =0.026 Ω typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline ADE-208-561B (Z) 3rd. Edition Jun 1998 LDPAK D 44 G S 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipati.

📥 Download Datasheet

Datasheet preview – K2938

📁 Similar Datasheet

  • K2935 - N-Channel 60V MOSFET (VBsemi)
  • K2936 - Silicon N Channel MOS FET (Renesas)
  • K2937 - 2SK2937 (Renesas Technology)
  • K2900-01 - N-channel MOS-FET (Fuji Electric)
  • K2902-01MR - 2SK2902-01MR (Fuji Electric)
  • K2915 - 2SK2915 (Toshiba Semiconductor)
  • K2917 - 2SK2917 (Toshiba Semiconductor)
  • K2919 - 2SK2919 (Sanyo)
  • K2925 - Silicon N-Channel MOSFET (Hitachi)
  • K2925 - N-Channel 60V MOSFET (VBsemi)
Other Datasheets by Hitachi Semiconductor

Full PDF Text Transcription

Click to expand full text
2SK2938(L),2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline ADE-208-561B (Z) 3rd. Edition Jun 1998 LDPAK D 44 G S 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR I Note3 AP E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
Published: |