HX6256 - 32K x 8 Static RAM

Product Overview

Honeywell

Datasheet Details

Part number	HX6256
Manufacturer	Honeywell
File Size	820.79 KB
Description	32K x 8 Static RAM
Datasheet	HX6256 Datasheet
Additional preview pages of the HX6256 datasheet.

Product details

Description

Typ 5.0 25 Max 5.5 125 VDD+0.3 50 Units V °C V ms CAPACITANCE (1) Symbol CI CO Parameter Input Capacitance Output Capacitance Typical (1) 5 7 Worst Case Min Max 7 9 Units pF pF Test Conditions VI=VDD or VSS, f=1 MHz VIO=VDD or VSS, f=1 MHz (1) This parameter is tested during initial design characterization only.DATA RETENTION CHARACTERISTICS Symbol VDR IDR Parameter Data Retention Voltage Data Retention Current Typical (1) Worst Case (2) Min Max 2.5 500 300 Units V µA Test Conditions NCS=VDR

Features

include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SOI substrate provide improved dose rate hardening.

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Published: Jul 3, 2008 |