HX6256
Overview
- Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.7 µm Process (Leff = 0.6 µm) * * * * *
- Total Dose Hardness through 1x106 rad(SiO2) Neutron Hardness through 1x1014 cm-2 Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s Dose Rate Survivability through 1x1011 rad(Si)/s Soft Error Rate of <1x10-10 upsets/bit-day in Geosynchronous Orbit No Latchup * *
- OTHER
- Listed On SMD#5962-95845
- Fast Cycle Times o ≤ 17 ns (Typical) o ≤ 25 ns (-55 to 125°C) Rea
