Description
Typ Max
3.3 25 3.6 125 VDD+0.3 50
Units
V °C V ms
4
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HX6408 Advanced Information
DC ELECTRICAL CHARACTERISTICS
Symbol
IDDSB
Parameter
Static Supply Current TA=25°C TA=125°C Static Supply Current Deselected Dynamic Supply Current, Selected (Write) 1 MHz 2 MHz 10 MHz 25 MHz 40 M
Features
- include tungsten via and contact plugs, Honeywell’s proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A seven transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power busing and the low collection volume SOI substrate provide improved dose rate hardening.
HX6408 Datasheet
