The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Aerospace Electronics
32K x 8 STATIC RAM—SOI
FEATURES
RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.75 µm Process (Leff = 0.6 µm) • Total Dose Hardness through 1x106 rad(SiO2)
www.DataSheet4U.com
HX6356
OTHER • Listed On SMD# 5962-95845 • Fast Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Typical Operating power < 15 mW/MHz • Asynchronous Operation • CMOS or TTL Compatible I/O • Single 5 V ± 10% Power Supply • Packaging Options - 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.) - 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.