HX6356 Datasheet | Honeywell

FEATURES RADIATION - Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.75 µm Process (Leff = 0.6 µm) - Total Dose Hardness through 1x106 rad(Si O2) .. OTHER - Listed On SMD# 5962-95845 - Fast Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) - Typical Operating power < 15 m W/MHz - Asynchronous Operation - CMOS or TTL patible I/O - Single 5 V ± 10% Power Supply - Packaging Options - 36-Lead CFP- Bottom Braze (0.630 in. x 0.650 in.) - 36-Lead CFP- Top Braze (0.630 in. x 0.650 in.) - Neutron Hardness through 1x1014 cm-2 - Dynamic and Static Transient Upset Hardness through 1x1011 rad(Si)/s - Dose Rate Survivability through 1x1012 rad(Si)/s - Soft Error Rate of <1x10-10 upsets/bit-day in Geosynchronous Orbit - Latchup Free GENERAL DESCRIPTION The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The RAM is available with either TTL or CMOS patible I/O. Power consumption is typically less than 15 m W/MHz in operation, and less than 5 m W when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V. Honeywell’s enhanced SOI RICMOS™ IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate length- Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7...