HX6656 Datasheet | Honeywell

FEATURES RADIATION - Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.75 µm Process (Leff = 0.6 µm) - Total Dose Hardness through 1x106 rad(Si O2) - Typical Operating Power <15 m W/MHz - Dynamic and Static Transient Upset .. Hardness through 1x109 rad(Si)/s - Dose Rate Survivability through 1x1011 rad(Si)/s - Neutron Hardness through 1x1014 cm-2 - SEU Immune - Latchup Free - Asynchronous Operation - CMOS or TTL patible I/O - Single 5 V ± 10% Power Supply OTHER - Read Cycle Times < 17 ns (Typical) ≤ 25 ns (-55 to 125°C) - Packaging Options - 28-Lead Flat Pack (0.500 in. x 0.720 in.) - 28-Lead DIP, MIL-STD-1835, CDIP2-T28 - 36-Lead Flat Pack (0.630 in. x 0.650 in.) GENERAL DESCRIPTION The 32K x 8 Radiation Hardened ROM is a high performance 32,768 word x 8-bit read only memory with industrystandard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The ROM operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The ROM is available with either TTL or CMOS patible I/O. Power consumption is typically less than 15 m W/MHz in operation, and less than 5 m W when de-selected. The ROM operation is fully asynchronous, with an associated typical access time of 14 ns. Honeywell’s enhanced SOI RICMOS™ IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate length- Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. FUNCTIONAL DIAGRAM A:0-8,12-13 Row Decoder - - - 32,768 x 8 Memory Array - - - CE NCS Column Decoder Data O...